3 Phase Igbt Gate Driver

Sic igbt 3 phase inverter development kit consists of the vfd 3 phase inverter module with its optimized gate driver.

3 phase igbt gate driver.

This design allows performance evaluation of the iso5852s in 3 phase inverter incorporating 1200v rated igbt modules of current ratings ranging from 50a 200a. The tida 00195 reference design consists of a 22kw power stage with ti s new reinforced isolated igbt gate driver iso5852s intended for motor control in various applications. The floating channel can be used to driven an n channel power mosfet or igbt in the high side configuration which operates up to 600v. A three phase inverter employs 6 transistor switches as shown above which are driven by pwm signals using gate driver circuits.

The gate drive circuit comprises of three ucc21520 devices which are dual igbt gate drivers. Options for our igbt and scr converters include voltage feedback current feedback thermal feedback device fault protection circuit protection and fiberoptic interface. Design for reinforced isolation three phase inverter with current voltage and temp protection. We offer three phase gate drivers six channels in a package with three independent half bridges.

We also provide three phase gate driver ics with advanced infineon silicon on insulator soi technologies. To provide a protection circuit the device includes an under voltage. The bs2130f is a monolithic bridge driver ic which can drive n channel power mosfet and igbt driver in 3 phase systems with bootstrap operations. The fan73893 is a monolithic three phase half bridge gate drive ic designed for high voltage high speed driving mosfets and igbts operating up to 600 v.

Single channel gate drivers. An advanced level shift circuit allows high side gate driver operation up to v s 9 8 v typical for v bs 15 v. Our igbt and scr gate driver boards come in full bridge half bridge 3 phase bridge single doubler twelve pulse ac switch and high voltage driver circuit boards. The logic inputs can be used 3 3v and 5 0v.

This reference design details a gate driver circuit for a three phase inverter. The gating signals of the inverter should have a phase difference of 120 degrees with respect to each other to acquire a three phase balanced output. The units include dc link voltage sensing diagnostic leds overvoltage protection current sensing and heatsink temperature sensing capability.